Registration accuracy in focused-ion-beam lithography for the fabrication of a GaAs FET with a mushroom gate.

YASUOKA A; HOSONO K; MORIMOTO H; SASAKI Y; WATAKABE Y; KATO T

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J-GLOBAL ID：200902015492769427 Reference number：90A0292095

Registration accuracy in focused-ion-beam lithography for the fabrication of a GaAs FET with a mushroom gate.

きのこ形ゲートをもつGaAs-FET製作のためのフォーカストイオンビームリソグラフィーにおけるレジストレーション精度

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Author (6)： , , , , ,
Material：
Volume： 136 Issue： 10 Page： 3030-3033 Publication year： Oct. 1989
JST Material Number： C0285A ISSN： 1945-7111 CODEN： JESOAN Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Manufacturing technology of solid-state devices

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