Art
J-GLOBAL ID：200902015493441883   Reference number：85A0462744

Passivation of defects in polycrystalline silicon solar cells by molecular hydrogen annealing.

分子水素焼きなましによる多結晶シリコン太陽電池内の欠点の不活性化層
Author (3)：
AGARWAL A

About AGARWAL A

(Univ. Roorkee, India)

About Univ. Roorkee, India

, 
BANA D

About BANA D

(Univ. Roorkee, India)

About Univ. Roorkee, India

, 
SINGAL C M

About SINGAL C M

(Indian Metals and Ferro Alloys Ltd.)

About Indian Metals and Ferro Alloys Ltd.


Material：
International Journal of Electronics  (Int J Electron)

About International Journal of Electronics


Volume： 58  Issue： 5  Page： 769-774  Publication year： May. 1985 
JST Material Number： C0287B  ISSN： 0020-7217  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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polycrystal

About polycrystal

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Solar cell 
(NC03084O)

About Solar cell

Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
分子

About 分子

, 
水素

About 水素

, 
焼きなまし

About 焼きなまし

, 
多結晶シリコン太陽電池

About 多結晶シリコン太陽電池

, 
欠点

About 欠点

, 
活性化層

About 活性化層


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