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ArticleJ-GLOBAL ID:200902015495605166整理番号:93A0751776

Microstructure, optoelectronic properties and saturated defect density of a-Si:H prepared in VHF-glow discharge using Ar and Xe dilution.

著者:KROLL U(Univ. Neuch<span style=text-decoration:overline>a^</span>tel, Neuch<span style=text-decoration:overline>a^</span>tel, CHE)、FINGER F(Forschungszentrum Juelich, Juelich, DEU)、DUTTA J(Ecole Polytechnique, Palaiseau, FRA)・・・
資料名:Amorph Silicon Tech 1992 ページ:135-140
発行年:1992年
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