Art

J-GLOBAL ID：200902015495605166   Reference number：93A0751776

Microstructure, optoelectronic properties and saturated defect density of a-Si:H prepared in VHF-glow discharge using Ar and Xe dilution.

Author (8)： KROLL U (Univ. Neucha^tel, Neucha^tel, CHE) ,  FINGER F (Forschungszentrum Juelich, Juelich, DEU) ,  DUTTA J (Ecole Polytechnique, Palaiseau, FRA) ,  KEPPNER H (Univ. Neucha^tel, Neucha^tel, CHE) ,  SHAH A (Univ. Neucha^tel, Neucha^tel, CHE) ,  HOWLING A (Ecole Polytechnique Fe ́de ́ral, Lausanne, CHE) ,  DORIER J-L (Ecole Polytechnique Fe ́de ́ral, Lausanne, CHE) ,  HOLLENSTEIN C (Ecole Polytechnique Fe ́de ́ral, Lausanne, CHE)
Material： Amorphous Silicon Technology - 1992  (Amorph Silicon Tech 1992)
Page： 135-140  Publication year： 1992 
JST Material Number： K19930422  ISBN： 1-55899-153-0  Document type： Proceedings
Country of issue： United States (USA)  Language： ENGLISH (EN)

Terms in the title (4)： Si ,  VHF ,  Ar ,  Xe