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ArticleJ-GLOBAL ID:200902015501924554整理番号:82A0437724

Statistics of charge carrier recombination at radiation defect clusters in silicon.

シリコンの放射線欠陥クラスタにおける電荷キャリアの再結合についての統計

著者:LUGAKOV P F(A.N. Sevchenko Scientific Research Inst. Applied Physics Problems, USSR)、SHUSHA V V(A.N. Sevchenko Scientific Research Inst. Applied Physics Problems, USSR)
資料名:Radiat Eff 巻:62 号:3/4 ページ:197-202
発行年:1982年
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