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ArticleJ-GLOBAL ID:200902015503619333整理番号:86A0337326

CVD機構の研究 蒸着温度のちがいによるSi(OMe)4とゼオライト外表面との反応

Study on CVD mechanism. Reaction of Si(OMe)4 with outer surface of zeolite caused by difference of evaporation temperature.

著者:河島義実(名古屋大工)、丹羽幹(名古屋大工)、村上雄一(名古屋大工)
資料名:触媒討論会討論会A予稿集 巻:56th ページ:46-47
発行年:1985年09月17日
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