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ArticleJ-GLOBAL ID:200902015506262142整理番号:82A0477993

Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface.

二酸化けい素/けい素界面における放射線誘起常磁性欠陥に対するバイアスの影響

著者:LENAHAN P M(Sandia National Lab., New Mexico)、DRESSENDORFER P V(Sandia National Lab., New Mexico)
資料名:Appl Phys Lett 巻:41 号:6 ページ:542-544
発行年:1982年09月15日
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