Art
J-GLOBAL ID：200902015512709086   Reference number：92A0040615

UV-irradiation effects on GaP growth in metalorganic molecular beam epitaxy.

有機金属分子線エピタキシー法によるGaP成長における紫外光照射効果
Author (3)：
KAJIMOTO ATSUSHI

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(日新製鋼)

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, 
YOSHIMOTO MASAHIRO

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(京大 工)

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, 
MATSUNAMI HIROYUKI

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(京大 工)

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Material：
電子情報通信学会技術研究報告  (IEICE Technical Report (Institute of Electronics, Information and Communication Engineers))

About 電子情報通信学会技術研究報告


Volume： 91  Issue： 321(ED91 116-130)  Page： 49-53  Publication year： Nov. 15, 1991 
JST Material Number： S0532B  ISSN： 0913-5685  Document type： Proceedings
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)
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compound semiconductor

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,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
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On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
ethanols

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Semiconductor thin films 
(BK14040E)

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Terms in the title (5)：
Terms in the title
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有機金属分子線エピタキシー

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, 
GAP

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, 
成長

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, 
紫外光

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, 
照射効果

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