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ArticleJ-GLOBAL ID:200902015516914288整理番号:91A0701724

Electrophysical properties of CdxHg1-xTe subjected to ion-beam etching.

イオンビームエッチングを施したCdxHg1-xTeの電気物理的性質

著者:IVANOV‐OMSKII V I(A.F.Ioffe Physicotechnical Inst., Academy of Sciences of the USSR, Leningrad)、MIRONOV K E(A.F.Ioffe Physicotechnical Inst., Academy of Sciences of the USSR, Leningrad)、MYNBAEV K D(A.F.Ioffe Physicotechnical Inst., Academy of Sciences of the USSR, Leningrad)
資料名:Sov Phys Semicond 巻:24 号:12 ページ:1379-1380
発行年:1990年12月
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