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ArticleJ-GLOBAL ID:200902015520093175整理番号:86A0027839

X-ray photoelectron spectroscopy study of GaAs (001) and InP (001) cleaning procedures prior to molecular beam epitaxy.

分子ビームエピタクシーに先立つGaAs(001)およびInP(001)の清浄化工程のX線光電子分光による研究

著者:CONTOUR J P(Lab. Physique du Solide et Energie Solaire, C.N.R.S., France)、MASSIES J(Lab. Physique du Solide et Energie Solaire, C.N.R.S., France)、SALETES A(Lab. Physique du Solide et Energie Solaire, C.N.R.S., France)
資料名:Jpn J Appl Phys Part 2 巻:24 号:7 ページ:L563-L565
発行年:1985年07月
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