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ArticleJ-GLOBAL ID:200902015521763549整理番号:88A0027320

Gate capacitance measurement on the small‐geometry MOSFET’s with bias.

バイアスによるジオメトリの小さいMOSFETのゲート・キャパシタンスの測定

著者:KIM C S(Electronics and Telecommunication Research Inst., KOR)、KIM K S(Electronics and Telecommunication Research Inst., KOR)、KIM Y H(Electronics and Telecommunication Research Inst., KOR)・・・
資料名:J Korean Inst Electron Eng 巻:24 号:5 ページ:818-822
発行年:1987年09月
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