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ArticleJ-GLOBAL ID:200902015521925735整理番号:90A0542609

Three dimensional parasitic effects in MOS transistors simulated with MINIMOS.

MINIMOSでシミュレートしたMOSトランジスタの三次元寄生効果

著者:THURNER M(Digital Equipment Corp., Wien, AUT)
資料名:AEUe 巻:44 号:3 ページ:181-186
発行年:1990年05月
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About J-GLOBAL

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