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ArticleJ-GLOBAL ID:200902015532122367整理番号:88A0013957

高抵抗層埋込み構造GaInAsP/InP電界吸収型光変調器

High-speed GaInAsP/InP buried-heterostructure optical intensity modulator with semi-insulating InP burying layers.

著者:そう田晴久(富士通研 厚木研)、中井建弥(富士通研 厚木研)、石川浩(富士通研 厚木研)・・・
資料名:電子情報通信学会半導体・材料部門全国大会講演論文集 巻:1987 号:2 ページ:2.117
発行年:1987年11月
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