Formation of TiN<sub>x</sub> ohmic contacts to InGaAs/InP by means of a load-locked integrated process.

KATZ A; FEINGOLD A; PEARTON S J

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J-GLOBAL ID：200902015534157303 Reference number：92A0349712

Formation of TiN_x ohmic contacts to InGaAs/InP by means of a load-locked integrated process.

ロードロック集積プロセス法によるInGaAs/InPへのTiN_xオーム性接触の形成

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Author (3)： , ,
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Volume： 7 Issue： 3 Page： 436-439 Publication year： Mar. 1992
JST Material Number： E0503B ISSN： 0268-1242 CODEN： SSTEET Document type： Article
Article type：短報 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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Manufacturing technology of solid-state devices

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Formation of TiNx ohmic contacts to InGaAs/InP by means of a load-locked integrated process.

Formation of TiN_x ohmic contacts to InGaAs/InP by means of a load-locked integrated process.