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ArticleJ-GLOBAL ID:200902015537881851整理番号:89A0361013

Effects of the elastic strains and relaxations on In-incorporation in (Al, In)As pseudomorphic layers grown by molecular beam epitaxy.

分子線エピタクシーにより成長する(Al,In)As仮像層中のIn取込みに対する弾性ひずみと緩和の影響

著者:TURCO F(Bellcore, NJ, USA)、MBAYE A A(Lab. Physique du Solide et Energie Solaire, Centre National de la Recherche Scientifique, Valbonne, FRA)、MASSIES J(Lab. Physique du Solide et Energie Solaire, Centre National de la Recherche Scientifique, Valbonne, FRA)
資料名:Journal of Crystal Growth 巻:95 号:1/4 ページ:201
発行年:1989年02月
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