Art
J-GLOBAL ID：200902015547407830   Reference number：84A0434172

LPE growth rate in AlxGa1-xAs system; Theoretical and experimental analysis.

AlxGa1-xAs系におけるLPE成長速度 理論的及び実験的解析
Author (1)：
DUTARTRE D

About DUTARTRE D

(Inst. National des Sciences Appliquees de Lyon, France)

About Inst. National des Sciences Appliquees de Lyon, France


Material：
Journal of Crystal Growth  (J Cryst Growth)

About Journal of Crystal Growth


Volume： 64  Issue： 2  Page： 268-274  Publication year： Nov. 1983 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
gallium arsenide

About gallium arsenide

,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=84A0434172&from=J-GLOBAL&jstjournalNo=B0942A") }}
JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films 
(BK14040E)

About Semiconductor thin films

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
LPE成長

About LPE成長

, 
理論

About 理論

, 
実験的解析

About 実験的解析


Return to Previous Page

TOP

BOTTOM