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ArticleJ-GLOBAL ID:200902015548680351整理番号:87A0314563

Incoherent light annealing of Si-implanted GaAs.

Siを注入したGaAsのインコヒーレント光焼なまし

著者:TAMURA A(Matsushita Electric Industrial Co., Ltd., Osaka, JPN)、INOUE K(Matsushita Electric Industrial Co., Ltd., Osaka, JPN)、ONUMA T(Matsushita Electric Industrial Co., Ltd., Osaka, JPN)
資料名:法政大学イオンビーム工学研究所報告 号:5 ページ:129-134
発行年:1986年03月
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