Relaxation processes following excitation and ionization of SiF<sub>4</sub> in the vicinity of the silicon 2p threshold. II. Dissociation of the molecular ions.

LABLANQUIE P; SOUZA A C A; DE SOUZA G G B; MORIN P; NENNER I

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J-GLOBAL ID：200902015550507462 Reference number：89A0525684

Relaxation processes following excitation and ionization of SiF₄ in the vicinity of the silicon 2p threshold. II. Dissociation of the molecular ions.

けい素2pしきい値近傍におけるSiF₄の励起とイオン化に続く緩和過程 II 分子イオンの解離

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Author (5)： , , , ,
Material：
Volume： 90 Issue： 12 Page： 7078-7086 Publication year： Jun. 15, 1989
JST Material Number： C0275A ISSN： 0021-9606 CODEN： JCPSA6 Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Photon interactions with molecules

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Relaxation processes following excitation and ionization of SiF4 in the vicinity of the silicon 2p threshold. II. Dissociation of the molecular ions.

Relaxation processes following excitation and ionization of SiF₄ in the vicinity of the silicon 2p threshold. II. Dissociation of the molecular ions.