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ArticleJ-GLOBAL ID:200902015550921480整理番号:88A0567713

Optimization of the static and frequency characteristics of high-power semiconductor devices by creation of local zones of high recombination in the base regions.

高パワー半導体のベース領域に局所的な高再結合領域を発生させて静特性と周波数特性を最適化する方法

著者:VOLLE V M(A.F. Ioffe Physicotechnical Inst., Academy of Sciences of the USSR, Leningrad, SUN)、VORONKOV V B(A.F. Ioffe Physicotechnical Inst., Academy of Sciences of the USSR, Leningrad, SUN)、GREKHOV I V(A.F. Ioffe Physicotechnical Inst., Academy of Sciences of the USSR, Leningrad, SUN)・・・
資料名:Sov Phys Tech Phys 巻:32 号:10 ページ:1158-1160
発行年:1987年10月
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