Art
J-GLOBAL ID：200902015551234087
Reference number：85A0364175
Electron-LO-phonon interaction near interfaces. Application to scattering of inversion layer electrons on SiO2-Si interfaces.
界面近傍の電子-LOフォノン相互作用 SiO2-Si界面での反転層電子の散乱への適用
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Author (2)：
,
Material：
Volume：
129
Issue：
1
Page：
349-362
Publication year：
May. 1985
JST Material Number：
C0599A
ISSN：
0370-1972
Document type：
Article
Article type：
原著論文
Country of issue：
Germany, Federal Republic of (DEU)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
金属-絶縁体-半導体構造【’81~’92】
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