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ArticleJ-GLOBAL ID:200902015558763735整理番号:92A0349684

X-ray characterization of ion-implanted and rapid thermal annealed silicon.

イオン注入後高速熱アニールしたシリコンのX線による特性評価

著者:HART L(NEC Corp., Ibaraki, JPN)、MATSUI J(NEC Corp., Ibaraki, JPN)
資料名:Semicond Sci Technol 巻:7 号:3 ページ:291-296
発行年:1992年03月
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J-GLOBAL: Linking, Expanding and Sparking

About J-GLOBAL

Linking

J-GLOBAL links information that represents the key to research and development. For example, linking articles and patents with people (authors and inventors) enables the extraction of a sequence of information.
It’s useful for making new discoveries and uncovering new information.

Expanding

The system enables searches of similar kinds of content through linkage with external sites.
It helps you to obtain knowledge from dissimilar fields and discover concepts that cross the boundaries of specialisms.

Sparking

Through repeated linkage and expansioniteration, J-GLOBAL provides unexpected hints for problem-solving and the illumination of new ideas.