Transmission electron microscopy characterization of In<sub>1-x</sub>Ga<sub>x</sub>Sb on (001) GaAs heteroepitaxial system.

ROBERTSON M D; CORBETT J M; WEBB J B; ROUSINA R

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J-GLOBAL ID：200902015559628041 Reference number：93A0676073

Transmission electron microscopy characterization of In_1-xGa_xSb on (001) GaAs heteroepitaxial system.

(100)GaAs上In_1-xGa_xAsヘテロエピタキシャル系の透過型電子顕微鏡法による特性評価

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Volume： 70 Issue： 10/11 Page： 866-874 Publication year： Oct. 1992
JST Material Number： B0229A ISSN： 0008-4204 CODEN： CJPHAD Document type： Article
Article type：原著論文 Country of issue： Canada (CAN) Language： ENGLISH (EN)

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Semiconductor thin films

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Transmission electron microscopy characterization of In1-xGaxSb on (001) GaAs heteroepitaxial system.

Transmission electron microscopy characterization of In_1-xGa_xSb on (001) GaAs heteroepitaxial system.