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ArticleJ-GLOBAL ID:200902015560315456整理番号:90A0587352

Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200.DEG.C.: Observation of an EL2-like defect.

200°Cで分子ビームエピタクシー成長したGaAs層における深準位欠陥の赤外吸収 EL2型欠陥の観測

著者:MANASREH M O(Wright‐Patterson Air Force Base, Ohio)、LOOK D C(Wright State Univ., Ohio)、EVANS K R(Universal Energy System Inc.)・・・
資料名:Phys Rev B Condens Matter Mater Phys 巻:41 号:14 ページ:10272-10275
発行年:1990年05月15日
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