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ArticleJ-GLOBAL ID:200902015561028566整理番号:85A0307710

Die Empfindlichkeit von MOS‐Transistoren gegenueber γ‐Strahlungs‐ und Elektronendosen.

γ線と電子の照射線量に対するMOSトランジスタの特性変化

著者:PETR I(Technische Univ. Prag)、GILAR O(Forschungsinst. Kerntechnische Geraete, CSSR)
資料名:Kernenergie 巻:28 号:3 ページ:146-150
発行年:1985年03月
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J-GLOBAL: Linking, Expanding and Sparking

About J-GLOBAL

Linking

J-GLOBAL links information that represents the key to research and development. For example, linking articles and patents with people (authors and inventors) enables the extraction of a sequence of information.
It’s useful for making new discoveries and uncovering new information.

Expanding

The system enables searches of similar kinds of content through linkage with external sites.
It helps you to obtain knowledge from dissimilar fields and discover concepts that cross the boundaries of specialisms.

Sparking

Through repeated linkage and expansioniteration, J-GLOBAL provides unexpected hints for problem-solving and the illumination of new ideas.