Art
J-GLOBAL ID:200902015561028566
Reference number:85A0307710
Die Empfindlichkeit von MOS-Transistoren gegenueber γ-Strahlungs- und Elektronendosen.
γ線と電子の照射線量に対するMOSトランジスタの特性変化
Author (2):
,
Material:
Volume:
28
Issue:
3
Page:
146-150
Publication year:
Mar. 1985
JST Material Number:
E0157A
ISSN:
0023-0642
CODEN:
KERNAQ
Document type:
Article
Article type:
原著論文
Country of issue:
Germany, Federal Republic of (DEU)
Language:
GERMAN (DE)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
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JST classification (2):
JST classification
Category name(code) classified by JST.
Transistors
, Radiation detection and detectors
Terms in the title (4):
Terms in the title
Keywords automatically extracted from the title.
,
,
,
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