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J-GLOBAL ID:200902015571851988   Reference number:88A0297008

Study of ion beam induced mixing in Sn/Si system using electrical resistivity measurements.

Sn-Si系におけるイオンビーム誘導混合の電気抵抗測定法による研究
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Volume: 120  Issue:Page: 387-392  Publication year: Feb. 1988 
JST Material Number: B0949B  ISSN: 0236-5731  CODEN: JRNCDM  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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Irradiational changes semiconductors 
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