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ArticleJ-GLOBAL ID:200902015572271829整理番号:82A0392106

Subthreshold behavior of silicon MOSFETs at 4.2K.

4.2KにおけるSi MOSFETの準しきい値特性

著者:KAMGAR A(Bell Lab., NJ)
資料名:Solid-State Electron 巻:25 号:7 ページ:537-539
発行年:1982年07月
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About J-GLOBAL

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