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ArticleJ-GLOBAL ID:200902015574269880整理番号:87A0344821

Stimulated emission from ultrathin InAs/GaAs quantum well heterostructures grown by atomic layer epitaxy.

原子層エピタクシーで成長した極薄InAs/GaAs量子井戸ヘテロ構造の誘導放出

著者:TISCHLER M A(North Carolina State Univ., NC, USA)、ANDERSON N G(North Carolina State Univ., NC, USA)、KOLBAS R M(North Carolina State Univ., NC, USA)・・・
資料名:Applied Physics Letters 巻:50 号:18 ページ:1266-1268
発行年:1987年05月04日
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