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ArticleJ-GLOBAL ID:200902015574769905整理番号:90A0294528

Modeling of defect-phosphorus pair diffusion in phosphorus-implanted silicon.

りん注入けい素における欠陥‐りん対拡散のモデル化

著者:JAEGER H U(VEB Forschungszentrum Mikroelektronik Dresden, Dresden)、FEUDEL T(VEB Forschungszentrum Mikroelektronik Dresden, Dresden)、ULBRICHT S(VEB Forschungszentrum Mikroelektronik Dresden, Dresden)
資料名:Phys Status Solidi A 巻:116 号:2 ページ:571-581
発行年:1989年12月
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