Art
J-GLOBAL ID：200902015577733880   Reference number：91A0769427

Carrier Recombination Rates in Strained-Layer InGaAs-GaAs Quantum Wells.

歪層InGaAs-GaAs量子井戸中のキャリア再結合速度
Author (6)：
CHEN Y-C

About CHEN Y-C

(City Univ. New York, NY)

About City Univ. New York, NY

, 
WANG P

About WANG P

(City Univ. New York, NY)

About City Univ. New York, NY

, 
COLEMAN J J

About COLEMAN J J

(Univ. Illinois, IL)

About Univ. Illinois, IL

, 
BOUR D P

About BOUR D P

(David Sarnoff Research Center, NJ)

About David Sarnoff Research Center, NJ

, 
LEE K K

About LEE K K

(Univ. Colorado, CO)

About Univ. Colorado, CO

, 
WATERS R G

About WATERS R G

(McDonell-Douglas Electronic Systems Co., NY)

About McDonell-Douglas Electronic Systems Co., NY


Material：
IEEE Journal of Quantum Electronics  (IEEE J Quantum Electron)

About IEEE Journal of Quantum Electronics


Volume： 27  Issue： 6  Page： 1451-1454  Publication year： Jun. 1991 
JST Material Number： H0432A  ISSN： 0018-9197  CODEN： IEJQA7  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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quantum well laser

About quantum well laser

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor lasers 
(BD04070L)

About Semiconductor lasers

Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
歪層

About 歪層

, 
InGaAs

About InGaAs

, 
GaAs

About GaAs

, 
量子井戸

About 量子井戸

, 
キャリア

About キャリア

, 
再結合速度

About 再結合速度


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