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ArticleJ-GLOBAL ID:200902015577733880整理番号:91A0769427

Carrier Recombination Rates in Strained-Layer InGaAs-GaAs Quantum Wells.

歪層InGaAs‐GaAs量子井戸中のキャリア再結合速度

著者:CHEN Y‐C(City Univ. New York, NY)、WANG P(City Univ. New York, NY)、COLEMAN J J(Univ. Illinois, IL)・・・
資料名:IEEE J Quantum Electron 巻:27 号:6 ページ:1451-1454
発行年:1991年06月
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