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ArticleJ-GLOBAL ID:200902015581975138整理番号:90A0723926

Two-dimensional simulation of band-to-band tunneling in an LDD-MOSFET: Explanation of experimental results and prediction of new phenomena.

LDD‐MOSFETにおけるバンドからバンドへのトンネル現象の二次元近似 実験結果の説明と新現象の予測

著者:ORLOWSKI M(Motorola, Inc., Texas)、SUN S W(Motorola, Inc., Texas)、BLAKEY P(Motorola, Inc., Texas)・・・
資料名:Dig Tech Pap Symp VLSI Technol 巻:1990 ページ:67-68
発行年:1990年
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