Investigation of TiAs precipitate formation and morphology degradation between TiSi<sub>2</sub> with C54 structure and poly silicon doped with arsenic.

PARK H H; CHO K I; LEE H T; SUNG M M; LEE S H; KWON O J; NAM K S

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J-GLOBAL ID：200902015582645310 Reference number：91A0090076

Investigation of TiAs precipitate formation and morphology degradation between TiSi₂ with C54 structure and poly silicon doped with arsenic.

C54構造のTiSi₂とAsイオンをドープした多結晶Si系での高温熱処理による形態劣化とTiAs析出物の形成

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Volume： 27 Issue： 11 Page： 1690-1696 Publication year： Nov. 1990
JST Material Number： H0632A ISSN： 1016-135X Document type： Article
Article type：原著論文 Country of issue： Korea, Republic of (KOR) Language： KOREAN (KO)

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Manufacturing technology of solid-state devices , Lattice defects in semiconductors

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Investigation of TiAs precipitate formation and morphology degradation between TiSi2 with C54 structure and poly silicon doped with arsenic.

Investigation of TiAs precipitate formation and morphology degradation between TiSi₂ with C54 structure and poly silicon doped with arsenic.