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ArticleJ-GLOBAL ID:200902015582645310整理番号:91A0090076

C54構造のTiSi2とAsイオンをドープした多結晶Si系での高温熱処理による形態劣化とTiAs析出物の形成

Investigation of TiAs precipitate formation and morphology degradation between TiSi2 with C54 structure and poly silicon doped with arsenic.

著者:PARK H H(ETRI)、CHO K I(ETRI)、LEE H T(ETRI)・・・
資料名:Journal of the Korean Institute of Telematics and Electronics 巻:27 号:11 ページ:1690-1696
発行年:1990年11月
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