Art
J-GLOBAL ID：200902015585969574   Reference number：90A0520282

VPE growth of SiC on step-controlled substrates.

Author (5)：
MATSUNAMI H

About MATSUNAMI H

(Kyoto Univ., Kyoto, JPN)

About Kyoto Univ., Kyoto, JPN

, 
SHIBAHARA K

About SHIBAHARA K

(Kyoto Univ., Kyoto, JPN)

About Kyoto Univ., Kyoto, JPN

, 
KURODA N

About KURODA N

(Kyoto Univ., Kyoto, JPN)

About Kyoto Univ., Kyoto, JPN

, 
YOO W

About YOO W

(Kyoto Univ., Kyoto, JPN)

About Kyoto Univ., Kyoto, JPN

, 
NISHINO S

About NISHINO S

(Kyoto Inst. Technology, Kyoto, JPN)

About Kyoto Inst. Technology, Kyoto, JPN


Material：
Amorphous and Crystalline Silicon Carbide and Related Materials  (Amorph Cryst Silicon Carbide Relat Mater)

About Amorphous and Crystalline Silicon Carbide and Related Materials


Page： 34-39  Publication year： 1989 
JST Material Number： K19900560  ISBN： 3-540-50706-X  Document type： Proceedings
Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)
Terms in the title (2)：
Terms in the title
Keywords automatically extracted from the title.
SiC

About SiC

, 
STEP

About STEP


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