Art
J-GLOBAL ID：200902015587812982   Reference number：93A0274698

Evolution des charges creees par un ion lourd dans un dispositif a semiconducteur.

半導体素子内での重イオンにより生じる電荷の発展
Author (3)：
MUSSEAU O

About MUSSEAU O

(Serv. Electronique, Bruye`res le Cha^tel, FRA)

About Serv. Electronique, Bruye`res le Cha^tel, FRA

, 
HESTO P

About HESTO P

(Univ. Paris XI, Orsay, FRA)

About Univ. Paris XI, Orsay, FRA

, 
LERAY J L

About LERAY J L

(Serv. Electronique, Bruye`res le Cha^tel, FRA)

About Serv. Electronique, Bruye`res le Cha^tel, FRA


Material：
Annales de Chimie. Science des Materiaux  (Annales de Chimie (Paris))

About Annales de Chimie. Science des Materiaux


Volume： 17  Issue： 7/8  Page： 487-506  Publication year： Dec. 27, 1992 
JST Material Number： A0402A  ISSN： 0151-9107  CODEN： ANCPAC  Document type： Article
Article type： 原著論文  Country of issue： France (FRA)  Language： FRENCH (FR)
Thesaurus term：
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cosmic ray irradiation

About cosmic ray irradiation

,...
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JST classification (3)：
JST classification
Category name(code) classified by JST.
Space crafts 
(QK08000Y)

About Space crafts

,  Measurement,testing and reliability of solid-state devices 
(NC03040G)

About Measurement,testing and reliability of solid-state devices

,  Irradiational changes semiconductors 
(BK16123E)

About Irradiational changes semiconductors

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
半導体素子

About 半導体素子

, 
重イオン

About 重イオン

, 
電荷

About 電荷

, 
発展

About 発展


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