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ArticleJ-GLOBAL ID:200902015587812982整理番号:93A0274698

Evolution des charges creees par un ion lourd dans un dispositif a semiconducteur.

半導体素子内での重イオンにより生じる電荷の発展

著者:MUSSEAU O(Serv. Electronique, Bruy<span style=text-decoration:overline>e`</span>res le Ch<span style=text-decoration:overline>a^</span>tel, FRA)、HESTO P(Univ. Paris XI, Orsay, FRA)、LERAY J L(Serv. Electronique, Bruy<span style=text-decoration:overline>e`</span>res le Ch<span style=text-decoration:overline>a^</span>tel, FRA)
資料名:Ann Chim Sci Mater 巻:17 号:7/8 ページ:487-506
発行年:1992年12月27日
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