Art

J-GLOBAL ID：200902015590816921   Reference number：92A0387420

Selective molecular-beam epitaxy for integrated npn/pnp heterojunction bipolar transistor applications.

集積npn/pnpヘテロ接合バイポーラトランジスタ用の選択分子線エピタクシー

Author (5)： STREIT D C (TRW Electronics and Technology Division, California) ,  UMEMOTO D K (TRW Electronics and Technology Division, California) ,  VELEBIR J R (TRW Electronics and Technology Division, California) ,  KOBAYASHI K (TRW Electronics and Technology Division, California) ,  OKI A K (TRW Electronics and Technology Division, California)
Material： Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures  (Journal of Vacuum Science & Technology. B. Microelectronics Processing and Phenomena)
Volume： 10  Issue： 2  Page： 1020-1022  Publication year： Mar. 1992 
JST Material Number： E0974A  ISSN： 1071-1023  CODEN： JVTBD9  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： compound semiconductor ,...

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JST classification (3)： Semiconductor-semiconductor contacts with Gr.13-15 element compounds  (BM03082Y) ,  Semiconductor thin films  (BK14040E) ,  Semiconductor integrated circuit  (NC03162T)

Terms in the title (3)： 集積 ,  ヘテロ接合バイポーラトランジスタ ,  分子線エピタクシー