Art
J-GLOBAL ID：200902015594208195   Reference number：94A0053059

Improvement of silicon power device characteristics using bonding technology.

Author (3)：
WILSON R

About WILSON R

(Queen’s Univ. Belfast, Belfast, GBR)

About Queen’s Univ. Belfast, Belfast, GBR

, 
GAMBLE H S

About GAMBLE H S

(Queen’s Univ. Belfast, Belfast, GBR)

About Queen’s Univ. Belfast, Belfast, GBR

, 
MITCHELL S J N

About MITCHELL S J N

(Queen’s Univ. Belfast, Belfast, GBR)

About Queen’s Univ. Belfast, Belfast, GBR


Material：
Proceedings of the 1st International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications, 1991  (Proc 1st Int Symp Semicond Wafer Bond Sci Technol Appl 1991)

About Proceedings of the 1st International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications, 1991


Page： 433-442  Publication year： 1992 
JST Material Number： K19930519  ISBN： 1-56677-008-4  Document type： Proceedings
Country of issue： United States (USA)  Language： ENGLISH (EN)

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