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ArticleJ-GLOBAL ID:200902015599285627整理番号:92A0211263

InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy.

分子ビームエピタクシーによるGaAsおよびGaAsで被覆したSi上に成長させたInAsのpnダイオード

著者:DOBBELAERE W(Interuniversity Micro‐Electronics Center(IMEC) vzw, Leuven, BEL)、DE BOECK J(Interuniversity Micro‐Electronics Center(IMEC) vzw, Leuven, BEL)、HEREMANS P(Interuniversity Micro‐Electronics Center(IMEC) vzw, Leuven, BEL)・・・
資料名:Appl Phys Lett 巻:60 号:7 ページ:868-870
発行年:1992年02月17日
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