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ArticleJ-GLOBAL ID:200902015607766150整理番号:87A0485118

A permeable-base switching device using stacked layers of silicon, silicon dioxide, and silicon-rich silicon dioxide.

シリコン,二酸化シリコン,およびシリコン濃度の高い二酸化シリコン膜の積層を用いた透過性ベーススイッチング素子

著者:DIMARIA D J(IBM Thomas J. Watson Research Center, NY, USA)、ARIENZO M(IBM Thomas J. Watson Research Center, NY, USA)
資料名:IEEE Trans Electron Devices 巻:34 号:8 Pt.1 ページ:1762-1767
発行年:1987年08月
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About J-GLOBAL

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