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ArticleJ-GLOBAL ID:200902015611211766整理番号:86A0106715

GaAs/(GaAl)As heterojunction bipolar transistors using a self-aligned substitutional emitter process.

自己整合置換エミッタ・プロセス法を用いたGaAs/(GaAl)Asヘテロ接合バイポーラトランジスタ

著者:CHANG M F(Rockwell International Corp., CA)、ASBECK M(Rockwell International Corp., CA)、MILLER D L(Rockwell International Corp., CA)・・・
資料名:IEEE Electron Device Letters 巻:7 号:1 ページ:8-10
発行年:1986年01月
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