Art
J-GLOBAL ID：200902015621681230
Reference number：90A0810034
C-V measurements of isotype heterojunctions with deep rechargeable interface states.
深い再充電可能な界面状態を持つ同形のヘテロ接合のC-V測定
-
Publisher site
Copy service
{{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=90A0810034©=1") }}
-
Access JDreamⅢ for advanced search and analysis.
{{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=90A0810034&from=J-GLOBAL&jstjournalNo=D0774A") }}
Author (1)：
Material：
Volume：
120
Issue：
1
Page：
K53-K56
Publication year：
Jul. 1990
JST Material Number：
D0774A
ISSN：
0031-8965
Document type：
Article
Article type：
短報
Country of issue：
Germany, Federal Republic of (DEU)
Language：
ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
JST classification (1)：
JST classification
Category name(code) classified by JST.
半導体-半導体接触【’81~’92】
Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
,
,
Return to Previous Page
