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ArticleJ-GLOBAL ID:200902015624349422整理番号:86A0485436

Growth defects in the chloride and MOCVD VPE of lattice matched layers of Ga0.47In0.53As on InP.

塩化物中の成長欠陥とInP上へのGa0.47In0.53Asの格子整合層のMOCVD VPE

著者:NEWCOMB S B(Univ. Cambridge)、STOBBS W M(Univ. Cambridge)
資料名:J Cryst Growth 巻:75 号:3 ページ:481-490
発行年:1986年06月
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