Art
J-GLOBAL ID:200902015626960013
Reference number:82A0383791
Thermoelectric power, Hall effect and density-of-states measurements on glow-discharge microcrystalline silicon.
グロー放電微結晶けい素についての熱電能,Hall効果および状態密度の測定
-
Publisher site
Copy service
{{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=82A0383791©=1") }}
-
Access JDreamⅢ for advanced search and analysis.
{{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=82A0383791&from=J-GLOBAL&jstjournalNo=H0004B") }}
Author (4):
,
,
,
Material:
Volume:
46
Issue:
2
Page:
177-190
Publication year:
Aug. 1982
JST Material Number:
H0004B
ISSN:
1364-2812
CODEN:
PMABDJ
Document type:
Article
Article type:
原著論文
Country of issue:
United Kingdom (GBR)
Language:
ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
JST classification (1):
JST classification
Category name(code) classified by JST.
Electric conduction in crystalline semiconductors
Terms in the title (6):
Terms in the title
Keywords automatically extracted from the title.
,
,
,
,
,
Return to Previous Page