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ArticleJ-GLOBAL ID:200902015631945758整理番号:88A0225281

Growth of high quality GaAs-AlGaAs quantum well structures.

高品質のGaAs‐AlGaAs量子井戸構造

著者:KONG M Y(Inst. Semiconductors, Academia Sinica, Beijing, CHN)、SUN D Z(Inst. Semiconductors, Academia Sinica, Beijing, CHN)、LIANG J B(Inst. Semiconductors, Academia Sinica, Beijing, CHN)・・・
資料名:J Electron Mater 巻:16 号:6 ページ:417-421
発行年:1987年11月
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About J-GLOBAL

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