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J-GLOBAL ID:200902015632363124   Reference number:89A0091478

Surface kinetic considerations for molecular-beam epitaxy growth of high-quality inverted heterointerfaces.

分子ビームエピタクシー法による高品質逆ヘテロ界面形成の動力学的考察
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Volume:Issue:Page: 1483-1486  Publication year: Jul. 1988 
JST Material Number: E0974A  ISSN: 1071-1023  CODEN: JVTBD9  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semiconductor thin films  ,  半導体-半導体接触【’81~’92】 
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