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ArticleJ-GLOBAL ID:200902015642984356整理番号:89A0383201

Stimulated annealing of ion-implanted silicon during a solid-phase silicide formation reaction.

固相シリサイド形成反応中のイオン打込みシリコンの熱処理

著者:ITAL’YANTSEV A G(Inst. Problems of the Technology of Microelectronics and Especially Pure Materials, Academy of Sciences of the USSR, SUN)、KRASNOBAEV L Y(Inst. Problems of the Technology of Microelectronics and Especially Pure Materials, Academy of Sciences of the USSR, SUN)、KUZNETSOV A Y(Inst. Problems of the Technology of Microelectronics and Especially Pure Materials, Academy of Sciences of the USSR, SUN)・・・
資料名:Sov Tech Phys Lett 巻:14 号:7 ページ:516-517
発行年:1988年07月
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