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ArticleJ-GLOBAL ID:200902015650421662整理番号:92A0219998

Surface CoSi2 layers by moderate dose cobalt implantation for self-aligned contacts.

自己整合接触のための中程度のドーズのCoイオン注入による表面CoSi2

著者:MASZARA W P(Allied‐Signal Aerospace Co., Maryland)
資料名:J Appl Phys 巻:71 号:3 ページ:1248-1252
発行年:1992年02月01日
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