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ArticleJ-GLOBAL ID:200902015652836207整理番号:92A0210266

Chemical Vapor Deposition of Silicon Carbide from 1,3-Disilacyclobutane.

1,3‐ジシラシクロブタンからの炭化けい素の化学蒸着

著者:LARKIN D J(NASA Lewis Research Center, Ohio)、INTERRANTE L V(Rensselaer Polytechnic Inst., New York)
資料名:Chem Mater 巻:4 号:1 ページ:22-24
発行年:1992年01月
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