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ArticleJ-GLOBAL ID:200902015655207022整理番号:90A0728152

Very low resistivity ohmic contact to p-type GaAs using InxGa1-xAs interlayer.

InxGa1‐XAs中間層を使用したP形GaAsに対する非常に低い抵抗率のオーミック接触

著者:JANEGA P L(National Research Council Canada, Ontario, CAN)、CHATENOUD F(National Research Council Canada, Ontario, CAN)、WASILEWSKI Z(National Research Council Canada, Ontario, CAN)
資料名:Electron Lett 巻:26 号:17 ページ:1395-1397
発行年:1990年08月16日
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About J-GLOBAL

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