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ArticleJ-GLOBAL ID:200902015655660444整理番号:93A0882089

Contamination control in silicon device manufacturing by diffusion length measurements and deep level spectroscopy.

著者:ZOTH G(Siemens AG, Munich, DEU)、BERGHOLZ W(Siemens AG, Munich, DEU)
資料名:Proc Symp Diagn Tech Semicond Mater Devices 1991 ページ:88-100
発行年:1992年
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