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J-GLOBAL ID：200902015660657915   Reference number：85A0366112

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3層ポリシリコンを用いた共有ワード線セル
Author (1)：
PLASS D W

About PLASS D W

(IBM Corp.)

About IBM Corp.


Material：
IBM Technical Disclosure Bulletin  (IBM Tech Disclosure Bull)

About IBM Technical Disclosure Bulletin


Volume： 27  Issue： 7B  Page： 4396-4397  Publication year： Dec. 1984 
JST Material Number： E0292B  ISSN： 0018-8689  CODEN： IBMTA  Document type： Article
Article type： 解説  Country of issue： United States (USA)  Language： ENGLISH (EN)
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integrated circuit memory

About integrated circuit memory

,...
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Thesaurus term/Semi thesaurus term
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On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
random access memory

About random access memory


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JST classification (2)：
JST classification
Category name(code) classified by JST.
Memory units 
(JC04060F)

About Memory units

,  Manufacturing technology of solid-state devices 
(NC03030V)

About Manufacturing technology of solid-state devices

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
ポリシリコン

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共有

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ワード線

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セル

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