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ArticleJ-GLOBAL ID:200902015668588696整理番号:86A0445383

Investigation of gallium selenide films, grown by the hot wall method, on silicon substrates.

けい素下地上に熱い壁法により成長したセレン化ガリウム膜

著者:SYSOEV B I(Voronezh Technological Inst., USSR)、BEZRYADIN N N(Voronezh Technological Inst., USSR)、SYNOROV YU V(Voronezh Technological Inst., USSR)・・・
資料名:Phys Status Solidi A 巻:94 号:2 ページ:K129-K132,877(2)
発行年:1986年04月
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