Growth kinetics of LPE Ga<sub>0.83</sub>Al<sub>0.17</sub>Sb layers grown from supercooled solutions.

MEBARKI M; SALSAC P; JOULLIE A; BOUGNOT G

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J-GLOBAL ID：200902015669081820 Reference number：84A0113446

Growth kinetics of LPE Ga_0.83Al_0.17Sb layers grown from supercooled solutions.

過冷却溶液からのLPE法成長Ga_0.83Al_0.17Sb層の成長動力学

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Volume： 61 Issue： 3 Page： 637-640 Publication year： Apr. 1983
JST Material Number： B0942A ISSN： 0022-0248 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Crystal growth of semiconductors

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Growth kinetics of LPE Ga0.83Al0.17Sb layers grown from supercooled solutions.

Growth kinetics of LPE Ga_0.83Al_0.17Sb layers grown from supercooled solutions.